Thin film capacitor and fabrication method thereof

Details Thin film capacitor and fabrication method thereof Thin film capacitor and fabrication method thereof

2007-05-29

2007-05-29

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S238000, C438S243000, C438S386000, C257S300000, C257SE27044, C257SE27016, C257SE27033, C257SE21008, C257SE21011

Reexamination Certificate

active

10747111

ABSTRACT:
A metal/insulator/metal capacitor and a fabrication method thereof are presented. The method includes forming a first electrode on an insulation film; forming a side wall made of insulating material on a side surface of the first electrode; forming an interlayer insulation film on the top surface of the insulation film including the first electrode and the side wall; forming a via hole to expose the first electrode by selectively etching the interlayer insulation film such that an edge area at which a side surface and a bottom of the via hole intersect is positioned on a top surface of the side wall; forming a dielectric layer on an inner wall of the via hole; forming a second electrode on the dielectric layer such that the via hole is filled; and forming a metal wire on the second electrode such that the metal wire is electrically connected to the second electrode.

REFERENCES:
patent: 6180976 (2001-01-01), Roy
patent: 6284619 (2001-09-01), Seymour et al.
patent: 6313003 (2001-11-01), Chen
patent: 6387775 (2002-05-01), Jang et al.
patent: 6426250 (2002-07-01), Lee et al.
patent: 6486529 (2002-11-01), Chi et al.
patent: 6569746 (2003-05-01), Lee et al.
patent: 6750114 (2004-06-01), Adler et al.
patent: 1998-040659 (1998-08-01), None
patent: 1020020073822 (2002-09-01), None

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