Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-30
2007-01-30
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S409000
Reexamination Certificate
active
10935177
ABSTRACT:
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
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Takemura Yasuhiko
Teramoto Satoshi
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Rose Kiesha
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra V.
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