Semiconductor devices having field effect transistors

Details Semiconductor devices having field effect transistors Semiconductor devices having field effect transistors

2007-09-04

2007-09-04

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S351000, C257S410000, C257SE21345, C438S157000, C438S283000

Reexamination Certificate

active

11030770

ABSTRACT:
A semiconductor device having a field effect transistor and a method of fabricating the same. In-situ doped epitaxial patterns are respectively formed at both sidewalls of a protruded channel pattern from a substrate by performing an in-situ doped epitaxial growth process. The in-situ doped epitaxial pattern has a conformal impurity concentration throughout. Accordingly, source/drain regions with a conformal impurity concentration are connected throughout a channel width of a channel region including both sidewalls of a protruded channel pattern. As a result, it is possible to maximize a driving current of the filed effect transistor, and an on-off characteristic can be highly stabilized.

REFERENCES:
patent: 6252284 (2001-06-01), Muller et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6858478 (2005-02-01), Chau et al.
patent: 2004/0075122 (2004-04-01), Lin et al.
patent: 2003-204068 (2003-07-01), None
patent: 2003-0065631 (2003-08-01), None
English language abstract of the Korean Publication No. 2003-0065631.
English language abstract of the Japanese Publication No. 2003-204068.
Yang, et al. “35nm CMOS FinFETs” IEEE 2002 Symposium On VLSI Technology Digest of Technical Paper, pp. 104-105.

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