Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-01-23
2007-01-23
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S296000
Reexamination Certificate
active
10902296
ABSTRACT:
According to the present invention, there is provided a semiconductor device manufacturing method comprising:depositing a semiconductor layer and mask material in order over a semiconductor substrate on an insulating film;patterning the semiconductor layer and mask material to form a semiconductor layer in a predetermined region;removing a surface portion of the insulating film by a predetermined depth by performing etching by using the mask material as a mask;forming gate insulating films on at least a pair of opposing side surfaces of the semiconductor layer;depositing silicon on the insulating film, gate insulating films, and mask material;patterning the silicon into a gate pattern to form, on the gate insulating films, a silicon film having the gate pattern on predetermined regions of the pair of opposing side surfaces of the semiconductor layer;ion-implanting a predetermined impurity into the semiconductor layer by using the silicon film as a mask, thereby forming a source region and drain region in two end portions of the semiconductor layer where the silicon film is not formed; andforming a metal film by depositing a metal on at least the silicon film, and forming a gate electrode by reacting the silicon film with the metal film.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Owens Douglas W.
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