Semiconductor device

Details Semiconductor device Semiconductor device

2007-05-22

2007-05-22

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S397000, C257S466000, C257S510000, C257S513000, C257S501000

Reexamination Certificate

active

11047603

ABSTRACT:
A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.

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Japanese Office Action dated Oct. 10, 2006 (mailing date), issued in corresponding Japanese Patent Application No. 2002-255471.

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