Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-25
2007-09-25
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S374000, C257S509000, C257S347000, C257S513000
Reexamination Certificate
active
10711844
ABSTRACT:
An integrated circuit having devices fabricated in both SOI regions and bulk regions, wherein the regions are connected by a trench filled with epitaxially deposited material. The filled trench provides a continuous semiconductor surface joining the SOI and bulk regions. The SOI and bulk regions may have the same or different crystal orientations. The present integrated circuit is made by forming a substrate with SOI and bulk regions separated by an embedded sidewall spacer (made of dielectric). The sidewall spacer is etched, forming a trench that is subsequently filled with epitaxial material. After planarizing, the substrate has SOI and bulk regions with a continuous semiconductor surface. A butted P-N junction and silicide layer can provide electrical connection between the SOI and bulk regions.
REFERENCES:
patent: 4333099 (1982-06-01), Tanguay et al.
patent: 4876213 (1989-10-01), Pfiester
patent: 5066995 (1991-11-01), Young et al.
patent: 5804490 (1998-09-01), Fiegl et al.
patent: 5912188 (1999-06-01), Gardner et al.
patent: 5956597 (1999-09-01), Furukawa et al.
patent: 5963803 (1999-10-01), Dawson et al.
patent: 6268637 (2001-07-01), Gardner et al.
patent: 6479368 (2002-11-01), Mandelman et al.
patent: 6555891 (2003-04-01), Furukawa et al.
patent: 6566204 (2003-05-01), Wang et al.
patent: 6630721 (2003-10-01), Ligon
patent: 6835981 (2004-12-01), Yamada et al.
patent: 6906384 (2005-06-01), Yamada et al.
patent: 2002/0171468 (2002-11-01), Bryant et al.
patent: 2003/0209765 (2003-11-01), Lee et al.
Chan et al.; “On the Integration of CMOS with Hybrid Crystal Orientations”; 2004 Symposium on VLSI Technology, Digest of Technical Papers; pp. 160-161.
Anderson Brent A.
Nowak Edward J.
Erdem Fazli
International Business Machines - Corporation
Purvis Sue A.
Sabo William D.
Whitham Curtis Christofferson & Cook PC
LandOfFree
Integrated circuit with bulk and SOI devices connected with... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated circuit with bulk and SOI devices connected with..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated circuit with bulk and SOI devices connected with... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3778517