Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2007-07-17
2007-07-17
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257SE23067, C257SE23101, C257SE23145, C257SE21503, C257S712000, C257S713000, C257S717000, C257S774000, C257S773000, C257S668000, C257S704000, C257S710000, C257S675000, C257S734000, C257S737000, C257S738000, C257S780000, C324S754090, C324S758010, C174S255000, C174S256000, C174S260000, C361S748000, C361S760000, C439S065000, C439S066000, C439S091000
Reexamination Certificate
active
10721984
ABSTRACT:
Under the present invention, a semiconductor chip is electrically connected to a substrate (e.g., organic, ceramic, etc.) by an interposer structure. The interposer structure comprises an elastomeric, compliant material that includes metallurgic through connections having a predetermined shape. In a typical embodiment, the metallurgical through connections electrically connect an under bump metallization of the semiconductor chip to a top surface metallization of the substrate. By utilizing the interposer structure in accordance with the present invention, the problems associated with previous semiconductor module designs are alleviated.
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Farooq Mukta G.
Knickerbocker John U.
Pompeo Frank L.
Shinde Subhash L.
Hoffman, Warnick & D'Alessandro
International Business Machines - Corporation
Kaschak Ronald A.
Williams Alexander Oscar
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