Ferroelectric memory device, electronic apparatus

Details Ferroelectric memory device, electronic apparatus Ferroelectric memory device, electronic apparatus

2007-05-29

2007-05-29

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S200000

Reexamination Certificate

active

11145316

ABSTRACT:
A ferroelectric memory device includes a main bit line, a plurality of local bit lines associated with the main bit line and disposed intersecting word lines, a plurality of first switching elements provided between the local bit lines and the main bit line, respectively, a plurality of memory cells provided at intersecting positions between the word lines and each of the plurality of local bit lines, and a plurality of redundant memory cells provided at intersecting positions between the main bit line and the word lines, wherein a malfunctioning memory cell is prohibited from operating and a redundant memory cell performs a substitute operation, and the plurality of first switching elements are operated such that the local bit line connected with the malfunctioning memory cell is connected to the main bit line.

REFERENCES:
patent: 5621690 (1997-04-01), Jungroth et al.
patent: 6831869 (2004-12-01), Yamano
patent: 2002/0067639 (2002-06-01), Byeon et al.
patent: 2003/0142563 (2003-07-01), Yamano
patent: 2001-126493 (2001-05-01), None

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