Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-03
2007-07-03
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257SE29132, C257SE29165, C438S216000, C438S261000, C438S287000, C438S591000
Reexamination Certificate
active
11197593
ABSTRACT:
According to an aspect of the present invention, there is disclosed a semiconductor device comprising a semiconductor substrate, and a gate insulating film of a P-channel MOS transistor, formed on the semiconductor substrate. The gate insulating film has an oxide film (SiO2), and a diffusion preventive film (BN) containing boron and nitrogen atoms.
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Kato Koichi
Matsushita Daisuke
Muraoka Koichi
Nakasaki Yasushi
Shimizu Takashi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Liu Benjamin Tzu-Hung
Tran Minhloan
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