Method for removing titanium dioxide deposits from a reactor

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

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C427S255230, C427S569000, C134S001100, C134S022100

Reexamination Certificate

active

10800880

ABSTRACT:
A process for the selective removal of a TiO2-containing substance from an article for cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a TiO2-containing substance from an article comprising: providing the article having the TiO2-containing substance deposited thereupon; reacting the substance with a reactive gas comprising at least one selected from a fluorine-containing cleaning agent, a chlorine-containing cleaning agent and mixtures thereof to form a volatile product; and removing the volatile product from the article to thereby remove the substance from the article.

REFERENCES:
patent: 4529474 (1985-07-01), Fujiyama et al.
patent: 4576698 (1986-03-01), Gallagher et al.
patent: 4657616 (1987-04-01), Benzing et al.
patent: 4786352 (1988-11-01), Benzing
patent: 5425842 (1995-06-01), Zijlstra
patent: 5486235 (1996-01-01), Ye et al.
patent: 5788778 (1998-08-01), Shang et al.
patent: 6027766 (2000-02-01), Greenberg et al.
patent: 6379575 (2002-04-01), Yin et al.
patent: 6544345 (2003-04-01), Mayer et al.
patent: 6554910 (2003-04-01), Sandhu et al.
patent: 6635569 (2003-10-01), Ameen et al.
patent: 6679978 (2004-01-01), Johnson et al.
patent: 2002/0071912 (2002-06-01), Giolando
patent: 2003/0235695 (2003-12-01), Greenberg, et al.
patent: 61-106780 (1986-05-01), None
“Structured Coatings and Nano-Engineered Materials,”CERAC Inc., vol. 12, #4 (2002).
G. Dang, et al., Comparison of Dry and Wet Etch Processes for Patterning SiO2/TiO2Distributed Bragg Reflectors for Vertical-Cavity Surface-Emitting Lasers,Journal of the Electrochemical Society, 148 (2), p. G25-G28 (2001).
Y. Kuo, “Plasma Etching Mechanism of Metal Oxides Derived from RIE of Ta2O5and TiO2,”Electrochemical Society Proceedings, vol. 96, 12, p. 536-544.
S. Norasetthekul, et al., Dry Etch Chemistries for TiO2thin films,Applied Surface Science, 185, p. 27-33 (2001).
T. Shiano, et al., “Etching of (Ba,Sr)TiO3Film by Chlorine Plasma,”J. Vac. Sci. Techno., A 18(5), p. 2080-2084 (2000).

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