Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-04-03
2007-04-03
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185270
Reexamination Certificate
active
11151952
ABSTRACT:
A buried bipolar junction is provided in a charge trapping transistor memory device. During a write operation electrons are injected into a surface depletion region of the memory cell transistors. These electrons are accelerated in a vertical electric field and injected over a barrier to a charge trapping dielectric layer of the memory cells.
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Micro)n Technology, Inc.
Nguyen Tan T.
Schwegman Lundberg Woessner & Kluth P.A.
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