Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Reexamination Certificate
2007-03-20
2007-03-20
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
C117S089000, C117S095000, C117S097000
Reexamination Certificate
active
10915095
ABSTRACT:
A silicon carbide seeded sublimation growth system and associated method are disclosed. The system includes a crucible, a silicon carbide source composition in the crucible, a seed holder in the crucible, a silicon carbide seed crystal on the seed holder, means for creating a major thermal gradient in the crucible that defines a major growth direction between the source composition and the seed crystal for encouraging vapor transport between the source composition and the seed crystal, and the seed crystal being positioned on the seed holder with the macroscopic growth surface of the seed crystal forming an angle of between about 70° and 89.5° degrees relative to the major thermal gradient and the major growth direction and with the crystallographic orientation of the seed crystal having the c-axis of the crystal forming an angle with the major thermal gradient of between about 0° and 2°.
REFERENCES:
patent: 4865685 (1989-09-01), Palmour
patent: 4866005 (1989-09-01), Davis et al.
patent: 5011549 (1991-04-01), Kong et al.
patent: RE34861 (1995-02-01), Davis et al.
patent: 5667586 (1997-09-01), Ek et al.
patent: 5718760 (1998-02-01), Carter, Jr. et al.
patent: 5746827 (1998-05-01), Barrett et al.
patent: 5958132 (1999-09-01), Takahashi et al.
patent: 6025289 (2000-02-01), Carter, Jr. et al.
patent: 6200917 (2001-03-01), Carter, Jr. et al.
patent: 6218680 (2001-04-01), Carter, Jr. et al.
patent: 6396080 (2002-05-01), Carter, Jr. et al.
patent: 6403982 (2002-06-01), Carter, Jr. et al.
patent: 6507046 (2003-01-01), Mueller
patent: 6639247 (2003-10-01), Carter, Jr. et al.
patent: 6706114 (2004-03-01), Mueller
patent: 6814801 (2004-11-01), Jenny et al.
patent: 6849874 (2005-02-01), Sumakeris et al.
patent: 2002/0014199 (2002-02-01), Harald et al.
patent: 2003/0233975 (2003-12-01), Jenny et al.
patent: 2004/0201024 (2004-10-01), Tsvetkov et al.
patent: 2004/0206298 (2004-10-01), Jenny et al.
patent: 2005/0022724 (2005-02-01), Malta et al.
patent: 2005/0022727 (2005-02-01), Fechko et al.
patent: 2000 044394 (2000-02-01), None
patent: 2001 072490 (2001-03-01), None
Mueller Stephan
Powell Adrian
Tsvetkov Valeri F.
Cree Inc.
Hiteshew Felisa
Summa, Allan & Additon, P.A.
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