Method of manufacturing a semiconductor device with a...

Details Method of manufacturing a semiconductor device with a... Method of manufacturing a semiconductor device with a...

2007-04-24

2007-04-24

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S149000, C438S166000, C257SE21324

Reexamination Certificate

active

11042352

ABSTRACT:
At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

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Specification, claims and drawings of U.S. Appl. No. 08/823,608, filed Mar. 24, 1997 (now abandoned).

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