Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-17
2007-04-17
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S374000, C257S399000, C257S446000
Reexamination Certificate
active
10243981
ABSTRACT:
A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera. Thereby, devices are isolated between MOS transistors, and noise caused by leakage current is decreased.
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Hamre Schumann Mueller & Larson P.C.
Jackson Jerome
Matsushita Electric - Industrial Co., Ltd.
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