High performance transistors with SiGe strain

Details High performance transistors with SiGe strain High performance transistors with SiGe strain

2007-09-11

2007-09-11

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S012000, C257SE21403, C438S285000

Reexamination Certificate

active

11066062

ABSTRACT:
A preferred embodiment of the invention comprises a semiconductor device having stress in the source/drain channel. The device comprises a substrate having a lattice constant greater than or equal to silicon and a first layer on the substrate, wherein the first layer has a lattice constant greater than the substrate. Alternative embodiments include a second layer formed on the first layer. The second layer has a lattice constant less than the first layer. Preferably, the second layer underlies a gate electrode and at least a portion of a sidewall spacer. Still other embodiments include a recess for inducing stress in the source/drain channel.

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