Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-04-03
2007-04-03
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S275000, C438S285000
Reexamination Certificate
active
10733378
ABSTRACT:
A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second material form a first island and second island at an pFET region and a nFET region, respectively. A tensile hard mask is formed on the first and the second island layer prior to forming finFETs. An Si epitaxial layer is grown on the sidewalls of the finFETs with the hard mask, now a capping layer which is under tension, preventing lateral buckling of the nFET fin.
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Chidambarrao Dureseti
Dokumaci Omer H.
Gluschenkov Oleg G.
Abate Esq. Joseph P.
Booth Richard A.
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