Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2007-05-01

2007-05-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S299000

Reexamination Certificate

active

11316633

ABSTRACT:
A semiconductor device according to a exemplary embodiment of the present invention includes a reverse spacer exposing a part of an epitaxial silicon layer on a silicon substrate, a gate oxide layer on at least the epitaxial silicon layer and a gate polysilicon layer on the gate oxide layer and at least part of the reverse spacer, and source/drain terminals including a first doped (shallow junction) region in the silicon substrate at a position exterior to the exposed epitaxial silicon layer and a second doped (deep junction) region neighboring the first doped region. The semiconductor device can thus have an epitaxial silicon channel of nanometer size, an ultra-shallow junction, and a deep junction.

REFERENCES:
patent: 6316323 (2001-11-01), Fang et al.
patent: 2001/0055842 (2001-12-01), Uh et al.
patent: 2004/0197995 (2004-10-01), Lee et al.
patent: 2005/0139932 (2005-06-01), Cho

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