Transistors of semiconductor devices and methods of...

Details Transistors of semiconductor devices and methods of... Transistors of semiconductor devices and methods of...

2007-05-01

2007-05-01

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S336000

Reexamination Certificate

active

11027518

ABSTRACT:
Transistors and methods of fabricating transistors are disclosed. A disclosed method comprises forming an inversion epitaxial layer on a silicon substrate; forming a hard mask on the inversion epitaxial layer; depositing a silicon epitaxial layer over the inversion epitaxial layer; forming a trench through the silicon epitaxial layer by removing the hard mask; forming reverse spacers on the sidewalls of the trench by filling the trench with an insulating layer and etching the insulating layer; forming a gate electrode over the reverse spacers; forming pocket-well regions and LDD regions in the silicon substrate by performing ion implantations; forming spacers on the sidewalls of the gate electrode; forming source and drain regions in the silicon substrate by performing an ion implantation; and forming a silicide layer on the gate electrode and the source and drain regions.

REFERENCES:
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 5879998 (1999-03-01), Krivokapic
patent: 6528847 (2003-03-01), Liu
patent: 6753230 (2004-06-01), Sohn et al.
Lee, Jung-Ho et al.,Laser Thermal Annealed SSR well Prior to Epi-channel Growth(LASPE)for 70 nm nFETs, Electron Devices Meeting, 2000. IEDM Technical Digest. International, pp. 441-444.

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