Structure and method of making a semiconductor integrated...

Details Structure and method of making a semiconductor integrated... Structure and method of making a semiconductor integrated...

2007-05-15

2007-05-15

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S642000, C438S649000, C438S652000, C438S655000, C257SE21002

Reexamination Certificate

active

10904330

ABSTRACT:
Disclosed is a method of fabricating a field effect transistor. In the method, a gate stack on a top surface of a semiconductor substrate is formed, and then a first spacer is formed on a sidewall of the gate stack. Next, a silicide self-aligned to the first spacer is deposited in/or on the semiconductor substrate. Subsequently a second spacer covering the surface of the first spacer, and a contact liner over at least the gate stack, the second spacer and the silicide, are formed. Then an interlayer dielectric over the contact liner is deposited. Next, a metal contact opening is formed to expose the contact liner over the silicide. Finally, the opening is extended through the contact liner to expose the silicide without exposing the substrate.

REFERENCES:
patent: 5341028 (1994-08-01), Yamaguchi et al.
patent: 5780348 (1998-07-01), Lin et al.
patent: 5792684 (1998-08-01), Lee et al.
patent: 5953614 (1999-09-01), Liu et al.
patent: 5990524 (1999-11-01), En et al.
patent: 6171954 (2001-01-01), Hsu
patent: 6214679 (2001-04-01), Murthy et al.
patent: 6306713 (2001-10-01), Hu et al.
patent: 6414375 (2002-07-01), Ohkawa
patent: 6518618 (2003-02-01), Fazio et al.
patent: 6630721 (2003-10-01), Ligon
patent: 6642119 (2003-11-01), Pelella et al.
patent: 6878597 (2005-04-01), Kim
patent: 6943071 (2005-09-01), Fazio et al.
patent: 2002/0137295 (2002-09-01), Thei et al.
patent: 2002/0149050 (2002-10-01), Fazio et al.
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 2003/0211717 (2003-11-01), Seo et al.
patent: 2004/0203211 (2004-10-01), Yang et al.
patent: 2005/0040472 (2005-02-01), Oh et al.
patent: 2005/0260819 (2005-11-01), Belyansky et al.

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