Ferroelectric thin film, method of manufacturing the same,...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000, C257SE21663, C257SE27104, C257SE29164

Reexamination Certificate

active

11241959

ABSTRACT:
A ferroelectric thin film formed of a highly oriented polycrystal in which 180° domains and 90° domains arrange at a constant angle to an applied electric field direction in a thin film plane and reversely rotate in a predetermined electric field.

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patent: 2003/0227803 (2003-12-01), Natori et al.

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