Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S648000, C438S687000
Reexamination Certificate
active
10867735
ABSTRACT:
In a method for manufacturing a semiconductor device, an insulating film having pores is formed on a substrate, and an opening is formed in the insulating film. Thereafter, a material gas supplying Si or C is supplied to the insulating film. Thereby, deficient elements, such as Si or C, are supplied to the insulating film. Thereafter, the opening, including a barrier metal, is filled with a conductive member to form a wiring structure.
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Furuya Akira
Ogawa Shin-ichi
Ohtsuka Nobuyuki
Okamura Hiroshi
Fujitsu Limited
Thai Luan
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