Semiconductor memory device and method of reading data

Details Semiconductor memory device and method of reading data Semiconductor memory device and method of reading data

2007-01-09

2007-01-09

Luu, Chuong Anh (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S310000

Reexamination Certificate

active

10738999

ABSTRACT:
First and second ferroelectric capacitors are selectively connected with a first bit line. Data is read to the first bit line from a first ferroelectric capacitor by applying a first voltage in a coordinate increasing direction of an axis or from the second ferroelectric capacitor by applying a second voltage having a sign opposite to the first voltage in the coordinate increasing direction. Third and fourth ferroelectric capacitors are selectively connected with a second bit line. Data is read to the second bit line from the third ferroelectric capacitor by applying a third voltage having the same sign as the first voltage in the coordinate increasing direction or from the fourth ferroelectric capacitor by applying a fourth voltage having the same sign as the second voltage in the coordinate increasing direction. A sense amplifier amplifies the potential difference between the first and second bit lines.

REFERENCES:
patent: 6611015 (2003-08-01), Ozaki et al.
patent: 10-255483 (1998-09-01), None
patent: 11-177036 (1999-07-01), None
D. Takashima, et al., “High-Density Chain Ferroelectric Random-Access Memory (CFRAM)”, 1997 Symposium on VLSI Circuits Digest of Technical Papers, pp. 83-84, 1997.

Affiliated with

Also associated with

Rating

Semiconductor memory device and method of reading data does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method of reading data, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of reading data will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3772360