Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-07-10

2007-07-10

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S249000

Reexamination Certificate

active

10810837

ABSTRACT:
In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is formed in an island-shaped element region formed on the semiconductor substrate, and electrical connection between the gate electrode of the MISFET and the well region in the semiconductor substrate is done on the side surface of the island-shaped element region.

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Assaderaghi, F., “Dynamic Threshold-Voltage MOSFET (DTMOS) for Ultra-Low Voltage VLSI,” IEEE Trans. Electron Devices, vol. 44, pp. 414-422, Mar. 1997.
Wong et al., “A 1V CMOS Digital Circuits With Double-Gate-Driven MOSFET,” IEEE International Solid-State Circuits Conference Digest of Technical Papers, Feb. 1997, pp. 292, 293, and 473.

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