Method of forming a semiconductor structure with non-uniform...

Details Method of forming a semiconductor structure with non-uniform... Method of forming a semiconductor structure with non-uniform...

2007-03-20

2007-03-20

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21421

Reexamination Certificate

active

11109961

ABSTRACT:
A power transistor structure uses metal drain and source strips with non-uniform widths to reduce variations in current density across the power transistor structure. The reductions in current density, in turn, reduce the source-to-drain turn on resistance and maximize the overall current carrying capacity of power transistor structure.

REFERENCES:
patent: 6084277 (2000-07-01), Disney et al.
patent: 6555883 (2003-04-01), Disney et al.
patent: 6728942 (2004-04-01), Lampaert et al.
patent: 6750489 (2004-06-01), Merrill

Affiliated with

Also associated with

Rating

Method of forming a semiconductor structure with non-uniform... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a semiconductor structure with non-uniform..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor structure with non-uniform... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769804