Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-24
2007-07-24
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257S473000
Reexamination Certificate
active
11116328
ABSTRACT:
A semiconductor device comprises an island shaped channel layer formed on a substrate, the channel later being composed of a semiconductor material, a gate insulation film formed on the channel layer, a gate electrode formed on the gate insulation film, an insulation film formed on both side faces opposite to one direction of the channel layer, a source electrode and a drain electrode made of a metal material and formed on a side face of the insulation layer.
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patent: 6346438 (2002-02-01), Yagishita et al.
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Kedzierski, et al., “ Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime”, IEDM Technical Digest, pp. 57-60, (2000).
Connelly, et al., “A New Route to Zero-Barrier Schottky Source/Drain CMOS”, Silicon Nano-technology, pp. 122-123, (2003).
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Pham Hoai
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