Semiconductor device having a low dielectric constant film...

Details Semiconductor device having a low dielectric constant film... Semiconductor device having a low dielectric constant film...

2007-03-06

2007-03-06

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S900000, C438S300000

Reexamination Certificate

active

10157908

ABSTRACT:
A semiconductor device has a structure that reduces the parasitic capacitance by using a film with a low relative dielectric constant as the side wall material of the gate. The material with a low relative dielectric constant is preferably a material whose relative dielectric constant is less than the relative dielectric constant of an oxide film, i.e., less than about 3.9.

REFERENCES:
patent: 6121671 (2000-09-01), Ko et al.
patent: 6127711 (2000-10-01), Ono
patent: 6307230 (2001-10-01), Chatterjee et al.
patent: 6372589 (2002-04-01), Yu
patent: 6406945 (2002-06-01), Lee et al.
patent: 6458661 (2002-10-01), Sung
patent: 6518631 (2003-02-01), En et al.
patent: 2003/0038305 (2003-02-01), Wasshuber
patent: 7-22338 (1995-01-01), None
Size, S.M., Physics of Semiconductor devices, 2ndEd., p. 852.
J.M. Sung et al.; Flourine Effect on Boron Diffusion of P+ Gate Devices; 17.2.1 - 12.2.4.

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