Method and device to reduce gate-induced drain leakage...

Details Method and device to reduce gate-induced drain leakage... Method and device to reduce gate-induced drain leakage...

2007-07-24

2007-07-24

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S408000

Reexamination Certificate

active

09648044

ABSTRACT:
An integrated circuit which provides a FET device having reduced GIDL current is described. A semiconductor substrate is provided wherein active regions are separated by an isolation region and a gate oxide layer is provided on the active regions. A gate electrode is provided upon the gate oxide layer wherein beneath an edge of the gate electrode, a gate-drain overlap region having a high dose ion implant is provided.

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