Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2007-07-24

2007-07-24

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S307000, C257S308000, C257S309000, C257S758000, C257S905000, C257S906000, C257S907000, C257S908000

Reexamination Certificate

active

11122720

ABSTRACT:
A semiconductor device comprises a first metal layer, which comprises a buried metal layer connected to a diffusion layer within a substrate or to a lower-layer wiring. A first metal wiring layer, a second metal layer having a buried metal layer, and a second metal wiring layer are sequentially connected. Within a groove passing through insulating layers sandwiching the metal wiring layer from above and below the same as well as on one of the insulating layers there is formed a capacitive element C.

REFERENCES:
patent: 5812444 (1998-09-01), Ema et al.
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6130449 (2000-10-01), Matsuoka et al.
patent: 6278148 (2001-08-01), Watanabe et al.
patent: 6617205 (2003-09-01), Kimura et al.

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