Nonvolatile memory cell with multiple floating gates formed...

Details Nonvolatile memory cell with multiple floating gates formed... Nonvolatile memory cell with multiple floating gates formed...

2007-09-25

2007-09-25

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27103

Reexamination Certificate

active

10964204

ABSTRACT:
In a nonvolatile memory cell having at least two floating gates, each floating gate (160) has an upward protruding portion. This portion can be formed as a spacer over a sidewall of the select gate (140). The spacer can be formed from a layer (160.2) deposited after the layer (160.1) which provides a lower portion of the floating gate. Alternatively, the upward protruding portion and the lower portion can be formed from the same layers or sub-layers all of which are present in both portions. The control gate (170) can be defined without photolithography. Other embodiments are also provided.

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