High voltage transistor and method of manufacturing the same

Details High voltage transistor and method of manufacturing the same High voltage transistor and method of manufacturing the same

2007-05-22

2007-05-22

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257S387000, C257S389000, C257S401000, C257S408000

Reexamination Certificate

active

10899371

ABSTRACT:
The present invention relates to a high voltage transistor and method of manufacturing the same. The high voltage transistor includes: a channel region which is formed in a semiconductor substrate; a gate insulating film which is formed on the channel region of the semiconductor substrate; a low concentration source region and a low concentration drain region having the channel region interposed therebetween and each being formed in the semiconductor substrate; a high concentration source region which is formed to be spaced away from the channel region by a first distance; a high concentration drain region which is formed to be spaced away from the channel region by a second distance that is larger than the first distance; a gate electrode which has a gate bottom portion interfacing with the gate insulating film over the channel region, and a gate top portion integrated with the gate bottom portion and protruding by a predetermined length from a top of the gate bottom portion to extend over the low concentration drain region; a first metal silicide layer which is formed on the high concentration source region; and a second metal silicide layer which is formed on the high concentration drain region.

REFERENCES:
patent: 5917218 (1999-06-01), Choi et al.
patent: 6071775 (2000-06-01), Choi et al.
patent: 6146952 (2000-11-01), Nariman et al.
patent: 6596599 (2003-07-01), Guo

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