Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-27
2007-03-27
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S306000, C257SE27084
Reexamination Certificate
active
10914223
ABSTRACT:
A capacitor consisting of a storage electrode (19), a capacitor dielectric film (20) and a plate electrode (21) is formed in a trench formed through dielectric films (6, 8, 10and12) stacked on a semiconductor substrate (1) and buried wiring layers (9and11) are formed under the capacitor. As the capacitor is formed not in the semiconductor substrate but over it, there is room in area in which the capacitor can be formed and the difficultly of forming wiring is reduced by using the wiring layers (9and11) for a global word line and a selector line. As the upper face of an dielectric film (32) which is in contact with the lower face of wiring (34) in a peripheral circuit area is extended into a memory cell area and is in contact with the side of the capacitor (33), step height between the peripheral circuit area and the memory cell area is remarkably reduced.
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Itoh Kiyoo
Kimura Shin'ichiro
Matsuoka Hideyuki
Sakata Takeshi
Sekiguchi Tomonori
Antonelli, Terry Stout and Kraus, LLP.
Lewis Monica
Renesas Technology Corp.
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