Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2007-04-10

2007-04-10

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S320000, C257S327000, C257S336000, C257S344000

Reexamination Certificate

active

11066567

ABSTRACT:
A drain (7) includes a lightly-doped shallow impurity region (7a) aligned with a control gate (5), and a heavily-doped deep impurity region (7b) aligned with a sidewall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiency. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

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Korean Office Action dated Sep. 22, 2006 (issued date), issued in corresponding Korean Patent Application No. 2005-7003251.

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