Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-22
2007-05-22
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000
Reexamination Certificate
active
10388596
ABSTRACT:
There are contained first and second conductive plugs formed in first insulating layer, an island-like oxygen-barrier metal layer for covering the first conductive plug, an oxidation-preventing insulating layer formed on the first insulating layer to cover side surfaces of the oxygen-barrier metal layer, a capacitor having a lower electrode formed on the oxygen-barrier metal layer and the oxidation-preventing insulating layer, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, a second insulating layer for covering the capacitor and the oxidation-preventing insulating layer, a third hole formed in respective layers from the second insulating layer to the oxidation-preventing insulating layer on the second conductive plug, and a third conductive plug formed in the third hole and connected to the second conductive plug.
REFERENCES:
patent: 5773314 (1998-06-01), Jiang et al.
patent: 5877062 (1999-03-01), Horii
patent: 5953619 (1999-09-01), Miyazawa et al.
patent: 6291250 (2001-09-01), Igarashi
patent: 6307228 (2001-10-01), Miyazawa et al.
patent: 6339008 (2002-01-01), Takenaka
patent: 6388281 (2002-05-01), Jung et al.
patent: 6441420 (2002-08-01), Nagano et al.
patent: 6485988 (2002-11-01), Ma et al.
patent: 6664578 (2003-12-01), Lee et al.
patent: 6686265 (2004-02-01), Beitel et al.
patent: 2002/0185683 (2002-12-01), Yamazaki et al.
patent: 472384 (2002-01-01), None
patent: 1 061 573 (2000-12-01), None
patent: 5-129156 (1993-05-01), None
patent: 10-150155 (1998-06-01), None
patent: 10-303398 (1998-11-01), None
patent: 11-54716 (1999-02-01), None
patent: 2000-138349 (2000-05-01), None
patent: 2000-174224 (2000-06-01), None
patent: 2000-349252 (2000-12-01), None
patent: 2000-349255 (2000-12-01), None
patent: 2001-44376 (2001-02-01), None
patent: 2001-44377 (2001-02-01), None
patent: 2001-250922 (2001-09-01), None
patent: 2001-525986 (2001-12-01), None
patent: WO 97/50116 (1997-12-01), None
patent: WO 01/29885 (2001-04-01), None
Office Action from Japanese Patent Office dated May 9, 2006 Application No. 2003-064601.
Ando Takashi
Hikosaka Yukinobu
Itoh Akio
Miura Jiro
Suezawa Kenkichi
Vu Hung
Westerman, Hattori, Daniels & Adrian , LLP.
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