Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-07-17
2007-07-17
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000
Reexamination Certificate
active
11081413
ABSTRACT:
A planarization method includes providing a second and/or third row Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a polishing surface in the presence of a planarization composition that includes a complexing agent.
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Klein Rita J.
Sinha Nishant
Deo Duy-Vu N.
Micro)n Technology, Inc.
Mueting Raasch & Gebhardt, P.A.
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