Semiconductor storage device and electronic equipment

Details Semiconductor storage device and electronic equipment Semiconductor storage device and electronic equipment

2007-01-30

2007-01-30

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185050, C365S210130

Reexamination Certificate

active

11213927

ABSTRACT:
Characteristic fluctuation of a reference cell due to read disturb is prevented. A memory cell27mand a reference cell27rrespectively have memory function bodies that are formed on both sides of a gate electrode and have a function to retain electric charge or polarization. The memory cell27mcan store independent information pieces in memory function bodies27mrand27mllocated on both sides of the gate electrode and the independent information pieces are read therefrom. On the other hand, in the reference cell27r, only the information piece stored in a memory function body27rllocated on one side of the gate electrode is referred to in a sense amplifier22.

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patent: 2004/0160828 (2004-08-01), Iwata et al.
patent: 2004/0164359 (2004-08-01), Iwata et al.
patent: 6-60676 (1994-03-01), None
patent: 6-176583 (1994-06-01), None
patent: 2004-221546 (2004-08-01), None

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