Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2007-07-17

2007-07-17

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S692000, C257SE21658

Reexamination Certificate

active

10609519

ABSTRACT:
The present invention provides a method for fabricating a semiconductor device capable of securing a bottom contact area of a storage node contact as well as of preventing losses of a bit line hard mask insulation layer. These effects are achieved by planarizing an inter-layer insulation layer, which is filled into etched portions formed between conductive patterns, with the bit line hard mask insulation layer through a CMP process. This planarization process decreases a thickness of an etch target to thereby provide more vertical etch profile compared to a typical etch profile that is tapered or inclined at a bottom contact area. As a result of the decreased thickness of the etch target and the more vertical etch profile, it is possible to obtain the wider bottom contact area and prevent losses of the bit line hard mask insulation layer.

REFERENCES:
patent: 6281540 (2001-08-01), Aoki
patent: 6716766 (2004-04-01), Ko

Affiliated with

Also associated with

Rating

Method for fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3757684