Semiconductor memory including error correction function

Details Semiconductor memory including error correction function Semiconductor memory including error correction function

2007-04-03

2007-04-03

Beausoliel, Robert (Department: 2113)

Error detection/correction and fault detection/recovery

Data processing system error or fault handling

Reliability and availability

C714S005110, C714S006130, C714S042000, C714S718000, C365S201000

Reexamination Certificate

active

10734303

ABSTRACT:
A semiconductor memory comprises, a data memory having a plurality of memory regions to store data at addresses specified, a code memory having the same address space as the data memory to store error correction codes, an error correction code control circuit including an error correction code generation circuit, a syndrome generation circuit and an error correction code decoding circuit, generating an error correction code for correcting data before the data is written back into the memory region, and comparing the generated error correction code with corresponding error correction code, thereby to determine whether the data is erroneous, and an error correction code function invalidity control circuit invalidating an error correction function of the error correction code control circuit when the memory regions are accessed first after power application.

REFERENCES:
patent: 6119248 (2000-09-01), Merkin
patent: 6216247 (2001-04-01), Creta et al.
patent: 63-167500 (1988-07-01), None
patent: 2000-242515 (2000-09-01), None
U.S. Appl. No. 10/734,303, filed Dec. 15, 2003, Kushida.
U.S. Appl. No. 10/828,282, filed Apr. 21, 2004, Kushida et al.
Kiyohiro Furutani, et al., “A Built-in Hamming Code ECC Circuit for DRAM'S”, IEEE Journal of Solid-State Circuits, vol. 24, No. 1, Feb. 1989, pp. 50-56.

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