Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-04-17
2007-04-17
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S487000, C438S749000, C438S945000, C117S010000, C257SE21134
Reexamination Certificate
active
09172135
ABSTRACT:
A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same. In the method of crystallizing the silicon film, an amorphous silicon film is formed on a substrate and a reflective film pattern is formed on the amorphous silicon film. The silicon film is crystallized by irradiating a laser onto the amorphous silicon film. The reflective film pattern is formed to expose the channel of the thin film transistor in the amorphous silicon film.
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F. Chau & Associates
Fourson George
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