Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2007-09-04
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S325000, C257S326000, C257S329000, C257S330000, C257SE29309
Reexamination Certificate
active
11073205
ABSTRACT:
The invention relates to a semiconductor memory having a multiplicity of memory cells and a method for forming the memory cells. The semiconductor memory generally includes a semiconductor layer arranged on a substrate surface that includes a normally positioned step between a deeper region and a higher region. The semiconductor memory further includes doped contact regions, channel regions, a trapping layer arranged on a gate oxide layer, and at least one gate electrode. The method for forming the memory cells includes patterning a semiconductor layer to form a deeper semiconductor region and a higher semiconductor region having a step positioned between the regions. The method further includes forming a first oxide layer and a trapping layer, and then removing portions of the trapping layer and the first oxide layer and applying a second oxide layer at least regions of a doped region, the trapping layer, and the step area, and applying a gate electrode to the second oxide layer and doping, at least in regions, of the deeper semiconductor region and the higher semiconductor region to form a deeper contact region and a higher contact region.
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Hofmann Franz
Landgraf Erhard
Luyken Richard Johannes
Schulz Thomas
Specht Michael
Infineon - Technologies AG
Patterson & Sheridan L.L.P.
Tran Thien F.
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