Drain-extended MOS transistors with diode clamp and methods...

Details Drain-extended MOS transistors with diode clamp and methods... Drain-extended MOS transistors with diode clamp and methods...

2007-03-06

2007-03-06

Le, Thao X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S342000, C257S344000, C257S328000

Reexamination Certificate

active

10890648

ABSTRACT:
High side extended-drain MOS driver transistors (T2) are presented in which an extended drain (108, 156) is separated from a first buried layer (120) by a second buried layer (130), wherein an internal or external diode (148) is coupled between the first buried layer (120) and the extended drain (108, 156) to increase the breakdown voltage.

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U.S. Appl. No. 10/880,907, filed Jun. 30, 2004, Pendharkar.

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