Method of forming a conductive structure

Details Method of forming a conductive structure Method of forming a conductive structure

2007-05-08

2007-05-08

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S210000, C438S238000, C438S239000, C438S240000, C438S243000, C438S244000, C438S253000, C438S386000, C438S387000, C438S396000, C438S625000, C438S628000, C438S629000, C438S633000, C438S637000, C438S639000, C438S642000, C438S644000, C438S645000, C438S650000, C438S652000, C438S654000, C438S657000, C438S660000, C438S666000, C438S669000, C438S672000, C438S686000, C438S688000, C438S700000, C257SE21575, C257SE21577

Reexamination Certificate

active

10848321

ABSTRACT:
A method of forming a conductive structure is disclosed. The method includes forming an interconnect in a substrate, and forming a layer of iridium on the interconnect. The layer of iridium has a thickness of less than six hundred angstroms. The method further includes annealing the layer of iridium, forming a dielectric layer on the layer of iridium, and forming a conductive layer on the dielectric layer.

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