Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-11
2007-09-11
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S288000
Reexamination Certificate
active
11199147
ABSTRACT:
The power semiconductor of the invention consists of an n+ drain area; an n− epitaxial area; p− body and p+ body areas formed on top of the n− epitaxial area in a striped configuration; an n° epitaxial area formed on the n− epitaxial area and between the p− body and p+ body areas; a p-type edge area formed beneath the n° epitaxial area to connect with the two ends of the p+ body area; an n+ source area formed on two sides of the p− body area; gate dielectrics formed on top of the n+ body area, the p− body area, and the n° epitaxial area; and gate electrodes formed on the gate dielectrics. The p-type edge section of the power semiconductor of the invention consists of multiple sub-areas that prevent ruggedness current from concentrating on the p+ body area and thereby improve the ruggedness of the power semiconductor.
Lewis Monica
Lite-On Semiconductor Corp.
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