Method of forming metal wiring of semiconductor device

Details Method of forming metal wiring of semiconductor device Method of forming metal wiring of semiconductor device

2007-05-22

2007-05-22

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S786000, C257SE21584

Reexamination Certificate

active

11089819

ABSTRACT:
Disclosed herein is a method of forming a metal wiring of a semiconductor device. A method of forming a metal wiring of a semiconductor device comprises the steps of sequentially forming a first anti-diffusion film, a second interlayer insulating film, a third interlayer insulating film and a capping film on a first interlayer insulating film in which a first metal wiring is formed, patterning the capping film, the third interlayer insulating film, the second interlayer insulating film and the first anti-diffusion film so that the first metal wiring is exposed, thus forming a via hole, patterning the capping film and the third interlayer insulating film so that a given surface of the second interlayer insulating film is exposed on the result in which the via hole is formed, thus forming a metal wiring trench, forming a second anti-diffusion film in the via hole and the metal wiring trench, and sequentially forming copper seed layers in the via hole and the metal wiring trench in which the second anti-diffusion film is formed, and then forming a copper layer by means of an electroplating process, thus forming a via and a metal wiring.

REFERENCES:
patent: 5895266 (1999-04-01), Fu et al.
patent: 6538324 (2003-03-01), Tagami et al.
patent: 6815339 (2004-11-01), Choi
patent: 2002/0029958 (2002-03-01), Chiang et al.
patent: 2004/0168908 (2004-09-01), Friedemann et al.
patent: 2004/0171250 (2004-09-01), Chiang et al.
patent: 2004/0214430 (2004-10-01), Ruelke et al.
patent: 2005/0085068 (2005-04-01), Chiang et al.
patent: 2005/0194691 (2005-09-01), Sakai et al.
patent: 2000-75302 (2000-12-01), None
patent: 2003-823 (2003-01-01), None
Official action issued in corresponding Korean application No. 2004-21783 dated Apr. 26, 2006.

Affiliated with

Also associated with

Rating

Method of forming metal wiring of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming metal wiring of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming metal wiring of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3750559