Plasma etching apparatus and plasma etching process

Details Plasma etching apparatus and plasma etching process Plasma etching apparatus and plasma etching process

2007-09-11

2007-09-11

Deo, Duy-Vu N (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S707000, C438S708000, C438S714000

Reexamination Certificate

active

11009005

ABSTRACT:
A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applied to generate plasma of an etching gas in the chamber; and a second electrode comprising a plurality of separated electrodes which are arranged between the chamber and the first electrode and to each of which high frequency power is applied independently.

REFERENCES:
patent: 7048869 (2006-05-01), Takahashi et al.
patent: 2003/0157242 (2003-08-01), Nakano et al.
patent: 2004/0149208 (2004-08-01), Shiraishi et al.
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patent: 10-275694 (1998-10-01), None
patent: 10-302997 (1998-11-01), None
patent: 2002-75963 (2002-03-01), None

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