Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-04-17
2007-04-17
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S148000
Reexamination Certificate
active
11233183
ABSTRACT:
A tunneling magneto-resistance element forming an MTJ memory cell has an elongated form having an aspect ratio larger than one for stabilizing the magnetization characteristics. Bit lines and write word lines for carrying data write currents are arranged along short and long sides of the tunneling magneto-resistance element, respectively. The data write current flowing through the bit line, which can easily have an interconnection width, is designed to be larger than the data write current flowing through the write word line. For example, a distance between the write word line and the tunneling magneto-resistance element is smaller than a distance between the bit line and the tunneling magneto-resistance element.
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Hoang Huan
Renesas Technology Corp.
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