Semiconductor device including sidewall floating gates

Details Semiconductor device including sidewall floating gates Semiconductor device including sidewall floating gates

2007-05-15

2007-05-15

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000

Reexamination Certificate

active

10962818

ABSTRACT:
A semiconductor device and a fabricating method thereof are disclosed. The semiconductor device includes polysilicon gate electrodes, a gate oxide layer, sidewall floating gates, a block oxide layer, source/drain areas, and sidewall spacers. In addition, the method includes the steps of: forming a block dielectric layer and a sacrificial layer on a semiconductor substrate; forming trenches by etching the sacrificial layer; forming sidewall floating gates on lateral faces of the trenches; forming a block oxide layer on the sidewall floating gates; forming polysilicon gate electrodes by a patterning process; removing the sacrificial layer; forming source/drain areas by implanting impurity ions into the resulting structure; injecting carriers or electric charges into the sidewall floating gates; and forming spacers on lateral faces of the polysilicon gate electrodes and the sidewall floating gates.

REFERENCES:
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 5358885 (1994-10-01), Oku et al.
patent: 6093945 (2000-07-01), Yang
patent: 6329248 (2001-12-01), Yang
patent: 6724029 (2004-04-01), Hsu et al.
patent: 6734055 (2004-05-01), Lin et al.
patent: 6885072 (2005-04-01), Jeng
patent: 2004/0253787 (2004-12-01), Lee et al.
Hiromasa Noda et al.; Threshold Voltage Controlled 0.1-um MOSFET Utilizing Inversion Layer as Extreme Shallow Source/Drain; IEDM 93, Tech. Dig., pp. 123 to 126; Published in 1993.
Stanley Wolf Ph.D.; Polycides and Salicides of TiSi2, CoSi2, and NiSi; Silicon Processing for the VLSI Era, vol. 4, Deep-Submicron Process Technology; Copyright 2002; pp. 603 through 638; Chapter 13; Lattice Press, Sunset Beach, CA.

Affiliated with

Also associated with

Rating

Semiconductor device including sidewall floating gates does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including sidewall floating gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including sidewall floating gates will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3749319