Semiconductor memory device, semiconductor device, and...

Details Semiconductor memory device, semiconductor device, and... Semiconductor memory device, semiconductor device, and...

2007-07-03

2007-07-03

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S325000, C257S326000, C257S316000, C257S411000, C257SE29309, C257SE27011

Reexamination Certificate

active

10826612

ABSTRACT:
A semiconductor memory device includes a nonvolatile memory section; and a volatile memory section, wherein the nonvolatile memory section includes a nonvolatile memory cell having a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function for retaining charges.

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