Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-05-01
2007-05-01
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE23074, C257SE51040
Reexamination Certificate
active
10864682
ABSTRACT:
Field effect devices having a gate controlled via a nanotube switching element. Under one embodiment, a non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A gate structure is disposed over an insulator over the channel region and has a corresponding terminal. A nanotube switching element is responsive to a first control terminal and a second control terminal and is electrically positioned in series between the gate structure and the terminal corresponding to the gate structure. The nanotube switching element is electromechanically operable to one of an open and closed state to thereby open or close an electrical communication path between the gate structure and its corresponding terminal. When the nanotube switching element is in the closed state, the channel conductivity and operation of the device is responsive to electrical stimulus at the terminals corresponding to the source and drain regions and the gate structure.
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Bertin Claude L.
Rueckes Thomas
Segal Brent M.
Jackson Jerome
Nantero Inc.
Wilmer Cutler Pickering Hale and Dorr LLP
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