Gate stack and gate stack etch sequence for metal gate...

Details Gate stack and gate stack etch sequence for metal gate... Gate stack and gate stack etch sequence for metal gate...

2007-01-16

2007-01-16

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S717000, C438S786000

Reexamination Certificate

active

10860086

ABSTRACT:
The present invention provides, in one embodiment, a process for fabricating a metal gate stack (200) for a semiconductor device (205). The process includes depositing a metal layer (210) over a gate dielectric layer (215) located over a semiconductor substrate (220). The process further includes forming a polysilicon layer (225) over the metal layer (210) and creating a protective layer (230) over the polysilicon layer (225). The process also includes placing an inorganic anti-reflective coating (235) over the protective layer (230). Other embodiments include a metal gate stack precursor structure (100) and a method of manufacturing an integrated circuit (300).

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B.E.E. Kastenmeier et al.; ‘Chemical Dry Etching of Silicon Nitride and Silicon Dioxide Using CF4/O2/N2 Gas Mixtures’; 1996 American Vacuum Society; J. Vac. Sci. Technol. A 14(5), Sep./Oct. 1996, pp. 2802-2813.

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