Method of fabricating semiconductor device having multilayer...

Details Method of fabricating semiconductor device having multilayer... Method of fabricating semiconductor device having multilayer...

2007-09-11

2007-09-11

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S108000, C438S639000, C438S672000, C257S774000, C257S779000

Reexamination Certificate

active

10988613

ABSTRACT:
A method of fabricating a semiconductor device includes forming a lower wiring layer on a semiconductor substrate, forming an interlayer insulating film on the lower wiring layer, layer, forming a plurality of. contact plugs in the interlayer insulating film so that the contact plugs are brought into electrical contact with the lower wiring layer, thereby forming an interlayer wiring layer, forming an upper wiring, layer on the interlayer wiring layer so that the upper wiring layer is brought into electrical contact with the contact plugs, and patterning the upper wiring layer so that the upper wiring layer corresponds to the contact plugs. In the patterning, after the upper wiring layer has been etched, the exposed interlayer insulating film and the exposed contact plugs are etched.

REFERENCES:
patent: 6191027 (2001-02-01), Omura
patent: 6271596 (2001-08-01), Alers
patent: 6291891 (2001-09-01), Higashi et al.
patent: 6448649 (2002-09-01), Lee et al.
patent: 2001/0038147 (2001-11-01), Higashi et al.
patent: 2004/0009653 (2004-01-01), Ueda et al.
patent: 2004/0166668 (2004-08-01), Ito
patent: 2004/0188842 (2004-09-01), Takewaka et al.
patent: 2005/0287803 (2005-12-01), Lee
patent: 2000-208615 (2000-07-01), None
patent: 2002-176098 (2002-06-01), None

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